Mechanical and electrical properties of ultra-thin chips and flexible electronics assemblies during bending

High Curvature Bending of Ultra-Thin Chips and Chip-on-Foil Assemblies

Introduction Ultra-thin chips of less than 20μm become flexible, allowing integration of silicon IC technology with highly flexible electronics. This combination allows for highly intelligent products of unprecedented thinness, flexibility and cost. Examples include sensor systems integrated into food packaging or healthcare and sport monitoring tags as wearable patches or even directly in clot...

Ultra-thin Silicon Chips in Flexible Microsystems

With the growing demand for mechanically flexible electrical systems and the increasing level of integration of electrical assemblies, hybrid build-ups combining polymer substrates and ultra-thin flexible silicon chips (system-in-foil) are getting more and more important. These systems need thin chips which maintain their functionality even in bent condition as well as reliable handling and ass...

Super Thin Flip Chip Assemblies on Flex Substrates - Adhesive Bonding and Soldering Technology – Reliability Investigations and Applications

Thinned silicon chips with very thin bumps (5-7μm) mounted on flexible substrates open up new dimensions in packaging technologies. The use of flexible substrates enables a large variety of geometric possibilities including folding and bending. Conventional flip chip technology using pick&place and standard reflow processes is not suitable for the assembly of ultra thin components. This is base...

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Mechanical Strain for 0 . 16 m nMOSFET on 30 m Si - Substrate

This paper reports the successful substrate transfer based on standard IC processing to an alternative substrate e.g. plastic. The device on ultra-thin Si substrate using grinding backside Si and thermo-compression bonding process is proposed. Acceptable electrical performances are achieved means that the substrate transfer process is controlled well. The DC characteristics of nMOSFETs as a fun...